inchange semiconductor isc product specification isc silicon npn power transistor 2N6704 description collector-emitter sustaining voltage- : v ceo(sus) = 130v(min) high switching speed low saturation voltage applications designed for converters, inve rters, pulse-width-modulated regulators and a variety of power switching circuits. absolute maximum rating s (t a =25 ) symbol parameter value unit v cev collector-emitter voltage-v be = -1.5v 180 v v ceo collector-emitter voltage 130 v v ebo emitter-base voltage 7 v i c collector current-continuous 7 a i cm collector current-peak 10 a i b b base current-continuous 5 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage ttemperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2N6704 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma; i b = 0 130 v v ce (sat)-1 collector-emitter saturation voltage i c = 4a; i b = 0.4a b 0.7 v v ce (sat)-2 collector-emitter saturation voltage i c = 7a; i b = 0.7a b 1.5 v v be (sat) base-emitter saturation voltage i c = 4a; i b = 0.4a b 1.4 v i cev collector cutoff current v cev = 180v;v be =-1.5v v cev = 180v;v be =-1.5v;t j = 125 0.1 1.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 0.1 ma h fe-1 dc current gain i c = 0.2a ; v ce = 2v 30 h fe-2 dc current gain i c = 4a ; v ce = 2v 20 c ob output capacitance i e = 0; v cb = 10v, f test = 0.1mhz 50 150 pf f t current-gain?bandwidth product i c = 0.5a; v ce = 10v, f test = 1mhz 50 200 mhz switching times t d delay time 0.1 s t r rise time 0.25 s t s storage time 1 s t f fall time i c = 4a; i b1 = -i b2 = 0.4a,v be = -4v 0.5 s isc website www.iscsemi.cn
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